Communications

EuMW 2015: Wideband transistor optimised for DC to 2.7GHz operation

10th September 2015
Mick Elliott

A wideband transistor optimised for DC to 2.7GHz operation and built using proprietary 4th generation GaN on Silicon (GaN on Si) process is sampling today. The device was announced by MACOM at European Microwave Week in Paris. This GaN on Si HEMT D-Mode transistor is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.

The MAGX-100027-100C0P supports CW, pulsed, and linear operation with output power levels up to 100 W (50 dBm). Featuring 50 V operation, this device offers CW operation of 18.3 dB gain at 2.45 GHz, and 70% drain efficiency.

For pulsed operation, the MAGX-100027-100C0P boasts 18.4 dB gain at 2.7 GHz and 71% drain efficiency. This 100% RF tested transistor is available in an industry standard plastic package with bolt down flange.

Delivering performance that rivals expensive GaN on Silicon Carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology, 4th generation GaN (Gen4 GaN) is positioned to break the final technical and commercial barriers to mainstream GaN adoption. Gen4 GaN delivers greater than 70% peak efficiency and 19 dB gain for modulated signals at 2.7 GHz, which is similar to GaN on SiC technologies, and more than 10 percentage points greater efficiency than LDMOS.

It also delivers power density that is more than four times that of LDMOS.

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