The chip offers better moisture sensitivity and protection from electrostatic discharge (ESD) for a more robust and reliable technology than Gallium arsenide (GaAs) devices, which require external matching and can suffer from delayed secondary avalanching. It is ideal for such products as cellular 4G base stations, broadband repeaters, distributed antenna systems and microwave backhaul equipment.
Utilizing these innovative technologies results in an industry-leading VGA with +41 dBm OIP3 with 13dB of maximum gain, a wide 23 dB gain control range with 1 dB step resolution, and a Noise Figure of 4 dB, all while consuming only 100mA of current, “The IDT F0480 delivers unique capabilities to help engineers meet the stringent requirements when designing-in and implementing RF VGAs,” said Chris Stephens, IDT’s senior director, Wireless Product Definition and Marketing. “Its very low power consumption of less than 500mW eases thermal management requirements, while its internal broadband matching greatly simplifies integration into the system.”
The F0480 has 2kV ESD rating and a moisture sensitivity level (MSL) rating of 1, compared to MSL3 for competing GaAs devices. The device’s flat gain slope vs. frequency counteracts board losses.