The kits allow users to easily evaluate the GaN E-HEMT performance in any half-bridge topology, either with the GS665MB-EVB universal motherboard or the user’s own system design.
According to GaN Systems, additional key features of the new evaluation boards include vertical-mount style with height of 35 mm, which fits in the majority of 1U designs and allows evaluation of GaN E-HEMTs in traditional through-hole power supply boards, current shunt position for switching characterisation testing and universal form factor and footprint for all products.