The transistors enable easy deployment of 5G Massive MIMO in urban and suburban areas.
NXP’s proprietary RF GaN technology is manufactured in its new Chandler (Arizona) fab.
This launch provides a GaN portfolio covering the 5G cellular bands between 2.3 and 4.0GHz.
A key benefit is that NXP’s GaN technology has a low-memory effect designed to maximise linearity and reduce Digital Pre-Distortion (DPD) complexity.
The portfolio covers 48V driver stages, allowing a single amplifier supply voltage for the lineup. Engineers can design high-efficiency power amplifiers with optimum power consumption, size, and weight for easier deployment.
The portfolio covers both driver and final stage discrete GaN transistors suitable for 10 Watt 32T32R and 5 Watt 64T64R Massive MIMO antennas.
Most transistors share the same DFN 7 x 6.5 package.