SiC MOSFET driver reference design optimised for desaturation protection

22nd February 2017
Posted By : Mick Elliott
SiC MOSFET driver reference design optimised for desaturation protection

A new SiC MOSFET driver reference design from Microsemi is available at Richardson RFPD supported by full design support capabilities. The MSCSICMDD/REF1 is designed to provide a reliable reference driver solution, a means of evaluating silicon carbide MOSFETs in a number of different topologies, as well as a means to assess device performance for parametric test purposes.

The new evaluation board requires only a +24 V power input and is optimised to drive SiC devices at a high speed with desaturation protection.

It is a base design that can be simplified depending upon the individual system requirements.  

According to Microsemi, additional key features of the MSCSICMDD/REF1 include: adjustable -5 V to +20V output gate drive and galvanic isolation of more than 2000 V on both gate drivers.

The device is capable of 6W of gate drive power per side; 8 W with modification and offers a peak output current of up to 30A and maximum switching frequency greater than 400 KHz.

It also features single-ended or RS485/RS422 differential input gate control, shoot through (short-circuit) protection and +/- 100 kV/µS capability.

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