In the video from Texas Instruments, the advantages of GaN in power supplier performance and the advantages of TI integration of the driver and protection into a GaN Power Stage are explained. In this two part presentation, the advantages of GaN over Silicon super junction MOSFETs, the advantages of TI's integrated power stage over discrete GaN devices are discussed, also shown are example applications that demonstrate the performance advantages of GaN.
Relevant TI GaN parts for this session are the LMG3410 and 3411 families of 600 volt GaNPower Stages and the LMG5200 80 volt GaN half bridge power stage.
Today, GaN is ready to enable designers to double the power supply density over what is achievable with super junction MOSFETs. TI's LMG3410 and LMG5200 power stages are in mass production. These devices can increase the density of your power supply and be designed at cost parity. By switching at higher frequencies than that is possible with MOSFETs, the power needed in my filter components can be reduced in size and cost.
To watch the video, click here.