Aiming to outperform conventional switching diodes

18th March 2016
Posted By : Joe Bush
Aiming to outperform conventional switching diodes

The Electronica China exhibition, held on 15th-17th March 15-17 in Shanghai, saw Littelfuse add a series of silicon Schottky devices designed for ultra-low forward voltage drop (VF) to its expanding power semiconductor portfolio.

Well suited for use in high frequency applications such as switch mode power supplies, as well as DC applications such as solar panel bypass diode and polarity protection diodes, the DST Series Schottky Barrier Rectifier is designed to meet the requirements of commercial and industrial applications. The diodes offer high junction temperature capability, low leakage and ultra-low forward voltage drop. Their higher junction temperature capability and low leakage provide higher reliability in harsh, high temperature environments.

“The DST Series’ ultra-low forward voltage drop performance is an important new addition to the growing Littelfuse power semiconductor device offering,” said Corey Deyalsingh, Director of Power Control Semiconductors at Littelfuse. “I’m confident it will help us add depth to our power semiconductor portfolio and expand our applications and market coverage.”


You must be logged in to comment

Write a comment

No comments




Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

CES 2018
9th January 2018
United States of America Las Vegas, Nevada
Developing wearable products: technology and opportunities
17th January 2018
United Kingdom Cocoon Networks, London
Smart Mobility Executive Forum
12th February 2018
Germany Berlin
embedded world 2018
27th February 2018
Germany Nuremberg
Industry 4.0 Summit 2018
28th February 2018
United Kingdom Manchester