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Si, SiC or GaN? The right choice for power devices
SiC Diodes rated for 1,700 DC and five amps

Si, SiC or GaN? The right choice for power devices

By the end of this webinar, attendees will learn:
29 May 2020
byNews Desk
  • The characteristics of latest silicon-based superjunction technology, SiC MOSFETs and GaN HEMTs 
  • The 600V/650V voltage classes where all three technologies co-exist 
  • Presented use cases e.g. telecom and servers
  • Topologies and control schemes in which wide bandgap devices can be used in the most beneficial way in comparison to the next best silicon-based alternative

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29 May 2020
byNews Desk

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29 May 2020
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SiC Diodes rated for 1,700 DC and five amps

29 May 2020

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