Join Electronic Specifier for a technical webinar exploring the key differences between gallium nitride (GaN) and silicon carbide (SiC), and how to determine the most suitable wide bandgap semiconductor technology for your application.
As power density, efficiency, and thermal performance become increasingly critical in applications ranging from consumer electronics to automotive, the decision between GaN and SiC is more important than ever. This session will compare electrical characteristics, voltage ranges, thermal behaviour, reliability, cost considerations, and packaging options, helping design engineers make informed technology choices.
Whether you’re working on low-voltage fast chargers or high-power industrial drives, this webinar will provide practical insights into where each technology excels, the trade-offs involved, and the design implications at the system level.
This webinar is ideal for power engineers, system architects, and technical decision-makers, the session will conclude with a live Q&A.
Date: Thursday, 11th September
Time: 3:00pm BST
Host: Paige West, Managing Editor, Electronic Specifier
Speakers
Laszlo Balogh, DMTS, High Voltage Power, Texas Instruments
Laszlo is currently representing Texas Instruments on the Technical Committee of the European Power Sources Manufacturers Association. Laszlo is a TI Distinguished Member, Technical Staff; has authored more than 50 conference papers, seminar presentations and application notes; and has numerous granted and pending patents. He received his master’s degree in electrical engineering from the Technical University of Budapest, Hungary, in 1983.
Pietro Scalia, Head of System Architecture and Marketing for Power, Renesas Electronics
Pietro’s team localised in the three regions is defining and supporting power system solutions for all the market segments, leveraging the entire Power portfolio and addressing new market trends and power architectures.
At onsemi (2021-2023) he lead the Munich Application and PLM team of Automotive EV-Traction Solutions, to define and develop SiC and Si Power Module and Bare DIE portfolio.
Previously he worked 11 years at TI, with worldwide Business Development responsibilities on Power products with application focus swinging from Automotive market sector to Telecommunications and Cloud, leveraging his earlier career in Siemens, Ericsson, ST Microelectronics and Academia.
Kamal Varadarajan, PhD, Director of Technology Development, Power Integrations
Dr. Varadarajan works as the Director of Technology Development at Power Integrations in San Jose, CA. He joined Power Integrations in 2007, where he has been leading GaN technology development for over 12 years. Dr. Varadarajan has been associated with the JEDEC JC70 Committee from its initial days helping shape power GaN test, datasheet and qualification standards and specifications for the wider industry. He has over 25 years of experience in the field of power semiconductors and has more than 20 publications and patents. Dr. Varadarajan obtained his B.E. in Electronics Engineering from NITK Surathkal, India and a Ph.D. in Electrical Engineering from Rensselaer Polytechnic Institute, Troy, New York.
Dr. Peter Friedrichs, Fellow SiC at Infineon Technologies
Dr. Peter Friedrichs is Fellow SiC at Infineon Technologies. He has been with the company since 2011. Prior to that, he was with the Corporate Research and Development of Siemens AG and the Fraunhofer Institute for Integrated Circuits in Erlangen. Peter Friedrichs received his Dipl.-Ing. in electrical engineering from the Slovak Technical University of Bratislava in 1993 and his Ph.D from the Friedrich-Alexander University of Erlangen.
