LM5113 enhancement mode GaN FET half-bridge driver demo

Min demonstrates TI’s LM5113 5A, 100V half-bridge gate driver for Enhancement mode Gallium Nitride (eGaN) FETs and ultra-efficient, small-footprint power supplies, class D audio amplifiers, hard-switched and high frequency circuits.

Keep Up to Date with the Most Important News

By pressing the Subscribe button, you confirm that you have read and are agreeing to our Privacy Policy and Terms of Use
Previous Post

Li-ion battery monitoring LSI delivers a current consumption of 25μA

Next Post

SRT to supply a national AIS Maritime Domain Management system