onsemi has announced it has signed a collaboration agreement with GlobalFoundries (GF) to develop and manufacture advanced gallium nitride (GaN) power products using GF’s 200mm eMode GaN-on-silicon process, starting with 650V. This collaboration accelerates onsemi’s roadmap for high-performance GaN devices and integrated power stages, expanding its portfolio with high-voltage products to meet the growing power demands of AI data centres, electric vehicles, renewable energy, industrial systems, and aerospace, defence and security.
“This collaboration brings together onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to deliver new 650V power devices for high-growth markets. Paired with our silicon drivers and controllers, these GaN products will enable customers to innovate and build smaller, more efficient power systems for AI data centres, EVs, space applications, and beyond. We are on track to begin providing samples to customers in the first half of 2026, and scale rapidly to volume production,” said Dinesh Ramanathan, Senior Vice President of Corporate Strategy, onsemi
“By combining our 200mm GaN-on-Si platform and US-based manufacturing with onsemi’s deep system and product expertise, we’re accelerating high-efficiency solutions and building resilient supply chains for data centres, automotive, industrial, aerospace and defence, and other critical markets. With onsemi as a key partner, we will continue to advance GaN semiconductors that meet the evolving demands of AI, electrification, and sustainable energy,” said Mike Hogan, Chief Business Officer, GlobalFoundries.
onsemi will pair its silicon drivers, controllers, and thermally enhanced packages with GF’s 650V GaN technology platform to deliver optimised GaN devices with higher power density and efficiency. These include power supplies and DC/DC converters for AI data centres, onboard chargers and DC-DC converters for electric vehicles, solar microinverters and energy storage systems, motor drives and DC/DC converters for industrial and aerospace, defence, and security applications.
This effort expands onsemi’s leading power semiconductor portfolio, which now includes the full spectrum of GaN technologies – from low, medium, and high voltage lateral GaN to ultra high-voltage vertical GaN – enabling system designers to build next-generation power architectures that deliver more power in smaller footprints. These GaN advantages include:
- Higher frequency operation – by operating at higher switching frequencies, GaN allows designers to reduce component count, system size, and cost while improving efficiency and thermal performance
- Bidirectional capability – bidirectional GaN capabilities enable entirely new topologies that can replace up to four traditional unidirectional transistors, cutting costs and simplifying designs
- Integrated functionality – combining GaN FETs with drivers, controllers, isolation, and protection in a single package allows for faster design cycles and lower electromagnetic interference. The thermally enhanced packages and optimised gate drivers push performance and reliability even at high switching speeds
Timing and availability
onsemi will begin sampling in the first half of 2026.
