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Navitas 160W fast charger powers oneplus flagship 10T smartphone

15th August 2022
Sheryl Miles

Navitas Semiconductor, the industry specialist in gallium nitride (GaN) power ICs, has announced that OnePlus has, again, chosen GaNFast next-gen power ICs to fast-charge its flagship smartphone, the OnePlus 10T.

The OnePlus 10T features the latest Qualcomm Snapdragon 8+ Gen 1 (4nm) chipset, a 120Hz FHD + AMOLED display screen, and 50MP main camera, with advanced Cryo-Velocity Vapor cooling, all driven by a powerful 4,800mAhr battery.

The 150W-capable SUPERVOOC Endurance Edition delivers up to a day’s power after just 10 minutes of charging, with a full charge – from 1-100% – taking only 19 minutes.

New York was the focus for the 10T’s debut, with a special launch event at the famous Gotham Hall, and a Navitas-OnePlus co-operative promotion on the Nasdaq Tower in Times Square.

“It’s great to be back for an in-person launch, and once again partnering with Navitas to deliver reliable, small, light and fast charging,” said Mr. Kinder LIU, COO of OnePlus. “From the 10R launched in July, to the 10T in August, and onwards to future designs, we expect to continue our in-depth collaboration with Navitas to deliver ultra-portable, ultra-fast user experiences.”

GaNFast ICs integrate GaN power with drive, control, protection and sensing to enable 3x faster charging with up to 40% energy savings in only half the size and weight of legacy silicon solutions. Using an NV6125 GaN IC for the high-frequency boost PFC, followed by a high-frequency QR flyback converter, the 160W charger measures 58 x 57 x 30mm (99cc) with power density over 1.6W/cc.

“Both OnePlus and Navitas focus on more speed and more power with cool operation,” said Mr. David Carroll, Navitas’ senior vice-president of world-side sales. “OnePlus is a very innovative company and appreciates the leading-edge efficiency, high quality, and world-leading environmental-benefits of GaNFast power ICs, as each one shipped saves 4 kg of CO2 vs. legacy silicon chips.”

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