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Waldom Electronics at EDS Leadership Summit 2025
Industry’s first space-grade 200V GaN FET gate driver from TI
Relay adds latching contact options

Industry’s first space-grade 200V GaN FET gate driver from TI

Ranging from 22V to 200V and supporting different radiation levels, TI’s new family of gate drivers enables designers to improve power system efficiency for every type of space mission. Texas Instruments (TI) today announced a new family of radiation-hardened and radiation-tolerant half-bridge gallium nitride (GaN) field-effect transistor (FET) gate drivers.
28 May 2025
byNews Desk
28 May 2025
byNews Desk

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Waldom Electronics at EDS Leadership Summit 2025

Waldom Electronics at EDS Leadership Summit 2025

28 May 2025
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Relay adds latching contact options

28 May 2025

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