Half bridge CoolGaN IPS modules target low-medium power
Infineon introduces the 600 V CoolGaN half bridge integrated power stage (IPS), the IGI60F1414A1L for low to medium power applications
The CoolGaN family has been added to the company's wideband gap - or WBG - power devices. Initally, the company is offering half bridge and single channel products, including chargers and adapters and witched mode power supplies (SMPS). The IGI60F1414A1L has an isolated gate driver with two digital PWM inputs to enable control functions. The design integrates two 40mΩ / 600V CoolGaN e-mode HEMT switches with dedicated galvanically isolated high- and low-side EiceDriver gate drivers in a thermally enhanced 8 x 8mm QFN-28 package, for compact and lightweight end products.
The IPS enables systems with very high power density and has an integrated isolation function, to seperate digital and power ground. The simplified PCB layout can shorten development time, while also lowering system bill of materials and lower total cost, added Infineon. The gate driver’s input-to-output isolation is based on the comapny's proven on-chip coreless transformer (CT) technology for high speed, robust operation, even for extremely fast switching transients with voltage slopes exceeding 150V/ns.
Switching behaviour can be adapted with addition of passive gate pathc components, advised the company, to suit particular applications. For example, slew rate optimisation can be implemented to reduce EMI, or for steady-state gate current setting, and negative gate drive for hard-switched applications.
The system in package (SiP) integration combined with the stable propagation delay of the gate driver is claimed to result in the lowest possible system dead-times for system efficiency and power density up to 35W/in³ for chargers and adapters. The SiP also allows for flexible, easy and fast designs, continued the company, for other applications, including LLC resonant topology and motor drives.
The IGI60F1414A1L is available for order now.
Infineon hosted 'Ensuring Field Reliability of SiC Devices - Solutions at Chip and Package Level' in the Industry Forum this morning, presenting an overview of SiC devices, in terms of stabilty and how the root causes of failures can be addressed. It also looked at chip level design and assembly technology to optimise SiC devices.