A full-bridge LLC resonant converter design, the GS-EVB-LLC-3KW-GS is based on GaN Systems' 650V e-mode transistors. The reference design exceeds the 80 PLUS Titanium standard for power supply units and achieves high power density (AC/DC power) above 100W/inch3 with high efficiency of more than 96%. Power density and efficiency are becoming more significant, explained the company, and the EU's Lot 9 2023 focuses on data centre infrastructure in relation to power supply and energy efficiency in line with the industry's shift from $/W to $-density metrics, where density is a measure of the power supply's size and power. Smaller power supplies using GaN allow more storage and memory to be included in the rack space to increase data centre capacity without expanding exisiting data centres or building new ones.
The 3kW LLC reference design has a low profile of less than 30mm in height and meets the 1U data centre form factor. Power density is up to 146W/inch3 (including air-forced cooling) and maximum switching frequency is 450kHz. There is also current, short circuit and over-voltage protection.
The reference design is designed to reduce design cysles and time to market for companies developing data centre, telecomms and industrial switch mode power supply (SMPS) applications.
PCIM 2021: GaN Systems'CEO, Jim Witham will present 'WBG: Serving Low to Line Voltage' on Wednesday 5 May at 15.25