100 & 650V GaN power semiconductors on show at EPE ’14 ECCE
At EPE ’14 ECCE Europe, 26th to 28th August in Finland, GaN Systems will present its latest devices, including a series of normally-off 100V GaN transistors and a low inductance, thermally-efficient 650V transistor family. The power semiconductors target applications such as onboard battery charging, high-voltage DC/DC and AC/DC conversion, UPS, air-conditioning, home appliances, heavy-duty battery-operated power tools and E-bikes.
Comprised of five devices, designated the GS61002P, GS61004P, GS61006P, GS61008P and GS71008P, the normally-off 100V GaN transistors features voltages of 20-80A and very low on resistances of 5-21mΩ.
The thermally-efficient 650V transistor family consists of five normally-off devices, GS66502P, GS66504P, GS66506P, GS66508P and GS43106L. Featuring reverse current capability, zero reverse recovery charge and source-sense for optimal high speed design, the GaN transistors provide voltages of 8.5-34A and on resistances of 41-165mΩ.
Both 100 and 650V series are supplied in compact, near chipscale, embedded GaNPX packages. These minimise inductance and optimise thermal performance.
GaN Systems will also showcase 100 and 200A high current components launched earlier this year.
"We are delighted to be at EPE ’14 and value the ECCE shows highly for their focus on the power industry and the high quality of the audience they attract. We are expecting significant interest from attendees, as GaN Systems is the first company in the market to have such a wide range of gallium nitride power switching semiconductors available for sampling now,” commented Girvan Paterson, President, GaN Systems.
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