Navitas’s new family of GaNSense Half-Bridge power ICs integrate drive and control, with sensing and autonomous protection, providing intelligence and autonomy for the device to self-protect. This complete solution is configured as a half-bridge stage, a fundamental building-block in power electronics. This revolutionary one-package solution enables superior performance with highest efficiency, power density, and reliability.
GaN is the next generation semiconductor and is proving to be the leading-edge catalyst in the second revolution in power electronics. Not since the late 1970s – when the bipolar transistor gave way to the power MOSFET – have we seen a new technology enable such a dramatic shift in efficiency, power density, cost, and industry upheaval.
Visit Navitas at electronica, B3.126 and chat to the team about the GaNSense Half-Bridge power IC.
Find more information about the product here: https://navitassemi.com/half-bridge-gan/
