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Gate driver reference design for SemiSouth normally off SiC JFETs enables very fast turn-on/ turn-off

20th January 2011

SemiSouth Laboratories, Inc

ES Admin

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SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) products for high-power, high-efficiency, harsh-environment power management and conversion applications, today announced a reference design and applications note which describes a gate driver optimized for high speed, hard switching of the company’s normally-off SiC vertical JFETs. The design enables very fast turn-on and turn-off in Isolated Bridge topologies and provides a peak output current of +6/- 3A for fast turn-on transients yielding record low switching energy losses.

Suitable for driving SemiSouth’s 63/50mΩ SJEP120R063 or SJEP120R050 JFETs, demo board SGDR600P1 is a two-stage driver - switching & conduction - featuring a switching frequency of up to 250kHz. Duty cycle is 0 to 100%.

Comments Dan Schwob, SemiSouth’s VP of Sales & Marketing: “The applications note and demo board describe a driver circuit which enables designers to take advantage of the benefits of our high performance, highly efficient and small JFETs, while keeping the BOM low.” Applications include hard-switched bridge topologies, inverters/converters and IT/telecoms power supplies.