“The Ramtron team is very proud of this accolade from Electronic Products China,” said Alex Tsui, Ramtron’s Area Director, Asia Pacific. “The FM22L16 moves F-RAM technology onto a leading-edge 130-nanometer manufacturing process developed in cooperation with Texas Instruments (TI). F-RAM is an ideal nonvolatile memory solution with potential to alter the memory landscape, especially on TI’s F-RAM-optimized CMOS process, which offers many new stand-alone and integrated product opportunities. It is very encouraging for the FM22L16 to be acknowledged by EPC’s highly regarded editorial panel.”
The FM22L16 is the highest density F-RAM product to date. A 4Mb, 3-volt, parallel nonvolatile RAM in a 44-pin thin small outline plastic (TSOP) package, the FM22L16 features fast access, virtually unlimited read/write cycles, and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the 4Mb F-RAM targets industrial control systems such as robotics, network and data storage applications, multi-function printers, auto navigation systems, and a host of other SRAM-based system designs.
The FM22L16 is organized as a 256K x 16 nonvolatile memory, accessed with an industry standard parallel interface. Access time is 55ns and cycle time is 110ns. The device reads and writes at bus speed for NoDelay™ writes with endurance of at least 1e14 (100-trillion) writes, and 10-year data retention.
The 4Mb F-RAM is a drop-in replacement for standard asynchronous SRAMs, but far superior as it does not need a battery to back up data, which significantly improves component and system reliability. Unlike battery-backed SRAM, the FM22L16 is a true surface-mount solution that does not require rework steps for battery attachment and is not jeopardized by moisture, shock, and vibration.
With an industry-standard parallel interface to current high performance microprocessors, the FM22L16 features a high-speed page mode that enables a peak bandwidth of 80-megabytes/second, providing one of the fastest nonvolatile memory solutions on the market. The device boasts a lower operating current than standard SRAMs, drawing 18 milliamps for reads/writes, and an ultra low current sleep mode of 5 microamps. It operates from 2.7 to 3.6 volts over the industrial temperature range (-40 degrees C to +85 degrees C).