The Optrans research and development team has succeeded in developing a new MOCVD process that produces multiple 4 wafers simultaneously which has significantly reduced the processing time required to grow InP wafers. This new Closed Coupled Showerhead (CCS)® technology used in Optrans MOCVD reactors results in increased production capacities and greater cost savings.
InP material is especially noted for its high operating speeds, low noise, low voltage and high reliability. The industry is shifting from traditional materials such as Gallium Arsenide (GaAs) to the next generation of high speed circuits using InP. InP is used in both photonic and electronic applications. Typical photonic device types include: lasers, photo-detectors, avalanche photo diodes, optical modulators and amplifiers, waveguide-based devices, quantum photonic devices, and both optoelectronic and photonic integrated circuits as well as new devices for optical communications, switching, networking, signal processing and leading edge material for solar cells.
InP based High Electron Mobility Transistors (HEMTs) can offer the ultimate solution to low noise operation and are the best choice for optoelectronic applications which require compatibility with InP-based optical devices and speeds of 40Gbits/sec or above. InP Heterojunction bipolar transistors (HBTs) are the preferred solution for future generations of fiber optic transmission systems envisioning speeds of up to 80Gbits/sec.