Innovative Silicon named a top finalist in Swiss Economic Forum Awards
Innovative Silicon, Inc. (ISi), developer of the Z-RAM zero-capacitor floating body memory technology, today announced that it was one of the top finalists in the Swiss Economic Forum’s 2008 Awards. Now in its 10th year, the Swiss Economic Forum is a two-day gathering of 1200 leading figures from industry, commerce, politics and academia. Held on May 22 and 23 in Thun, Switzerland, the event provided a discussion forum for international business, technology and economic trends.
“We are delighted to have been chosen as a leading finalist in these prestigious awards,” commented ISi’s CEO, Mark Eric Jones. “Low cost, efficient DRAM memories are a key enabling technology for new electronic product designs, and are therefore fundamental for continued economic development.”
The electronics industry is now at a crossroads: traditional memory technologies are no longer shrinking as predicted by Moore’s Law, which is slowing down the progress many have come to expect in the electronics industry. Chip makers must choose new approaches that enable them to break through this memory ‘brick wall’ and continue delivering better performance at lower prices.
“Our Z-RAM floating body memory technology has emerged as a leading DRAM replacement candidate, having already been licensed by both Hynix Semiconductor and AMD for their future product designs,” continued Jones. “Z-RAM will help the industry continue delivering smaller, lower cost and higher performing products.”