Analysis

Infineon ships over 1bn TVS diodes in WLL packages in 2014

24th February 2015
Nat Bowers
0

Infineon Technologies has announced that more than 1bn ultra-small TVS diodes in the company’s bare silicon WLL package were delivered to customers in 2014. TVS diodes in WLL packages are used in applications where miniaturisation is a priority, including touch screen and keypad interfaces and the increasingly popular high-speed data ports used in mobile electronics.

High signalling speed and small size both increase the vulnerability of electronics to ESD, while simultaneously requiring that the diodes used do not degrade signal quality of the circuit. Infineon’s TVS diodes are recognised for the exceptionally low parasitic resistance needed for high signal quality while meeting or exceeding all requirements for protection from severe ESD defined in the IEC61000-4-2 standard.

The Infineon SG-WWL-2-1 package has a tiny footprint of 0.58x0.28mm and is just 0.15mm thin. It is designed for direct attachment to PCBs adjacent to a connector, such as a USB port, or an external contact point such as a control button or touchpad. With an average of 10-30 TVS diodes used in typical consumer electronics products this small size with no sacrifice in performance is a great benefit for achieving miniaturisation goals.

WLL packaged devices in the Infineon TVS diode portfolio include the multi-purpose ESD200-B1-CSP0201, which protects human/device interface points such as touchscreens, keypads/boards, buttons and audio/headset input ports. Designed to clamp ESD to a voltage level of just 12V, the diode’s bidirectional characteristics simplifies assembly onto the PCB on high volume production lines. The diode absorbs ESD strikes up to ±16,000V for air and contact discharge, whereas the standard test specified by IEC61000-4-2 only demand for safety at contact discharges at ±8,000V.

Designed for protection of high-speed interfaces, the ESD108-B1-CSP0201 provides an exceptional combination of low clamping voltage of 20V for ±8,000V contact discharge and low parasitic capacitance of 0.28pF typically found at 1MHz. Both low clamping and parasitic capacitance ensure critical signal integrity. The diode absorbs ESD strikes up to ±25000V for air and contact discharge, which far exceeds standard requirements of ±8,000V contact and ±15,000V air discharge.

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