GaN-on-Si will be preferred GaN substrate for next 10 years, predicts research

However, the substrate that the GaN device is built on - a wafer of silicon, silicon carbide (SiC), or more GaN - makes a big difference in the cost and performance of the device.

Lux Research analysts evaluated the overall GaN market, besides evaluating the growth prospects of the three GaN flavors. According to Lux, GaN-on-Si will be the runaway leaders in the renewables and grid markets, as well as transportation, attaining markets of about $350m and $380m, respectively, in 2024. GaN-on-SiC will grow at a 46% CAGR from 2017 to 2024, reaching $140m. Driven by the SiC substrates’ ability to function efficiently at high temperatures, it will gain the most adoption in transportation. The lack of cheaper GaN substrates and a relative lack of developers mean GaN-on-GaN will play little commercial role in the next decade. More R&D is needed on cost-saving innovations like hybrid manufacturing processes.

“Of the three GaN flavors, GaN-on-Si will be the cheapest, pushing adoption of GaN-on-SiC or GaN-on-GaN out into the future,” said Pallavi Madakasira, lead author of the report titled, ‘Breaking Down the Gallium Nitride Power Electronics Market,’ and Analyst, Lux Research.“Even though both GaN-on-SiC and GaN-on-GaN offer performance improvements over silicon, high prices for SiC and GaN substrates will limit adoption,” she added.

‘Breaking Down the Gallium Nitride Power Electronics Market,’ is part of the Lux Research Energy Electronics Intelligence service.