Girvan Patterson, CEO of GaN Systems comments: “We have appointed Vqdot due to its expertise across numerous application areas, including RF power, switching power supplies, and advanced power conversion applications. Its team is experienced in exploring novel applications for new power technologies and brings a wealth of advice and expertise to manufacturers looking to gain competitive advantage through the early adoption of gallium nitride power semiconductors.”
Luke Raymond, CEO and Co-founder Vqdot added: “Gallium Nitride devices promise significant advantages over traditional silicon semiconductors, including higher electric breakdown characteristics, many times the band-gap and exceptional carrier mobility. GaN devices are projected to secure a significant portion of the silicon-based semiconductor market within the next three to five years and will enable power electronics to become smaller, lighter and more efficient. We are excited to be working with GaN Systems and to be bringing gallium nitride’s superior performance advantages and clean technology to next generation products”.