Flexible CMOS Process Development from Toshiba

Toshiba’s service is ideal for customers developing special applications including sensors, detectors and other analogue functions and for companies looking to migrate existing applications to commercially attractive CMOS-based technology. Currently available process nodes comprise 0.6µm, 0.35µm, 0.18µm, 0.13µm, 110nm and 90nm. Standard IP options range from logic and embedded memory (SRAM, ROM, EEPROM and Flash EEPROM) to CMOS sensors with a variety of pixel sizes. High-voltage CMOS and DMOS processes are available for designs demanding higher power operation.

Working closely with Toshiba development teams, customers have the flexibility to define a range of options, devices, design rules and modules. These include special wafer substrates, custom-specific process modules, special implant- and diffusion process conditions and custom layer stacks. Toshiba is also offering non-standard post-processing steps such as ‘through-silicon-vias’, protection films, optical films and micro-lenses.

The flexible process foundry service also covers wafer probing and light/dark testing in Toshiba’s fab in Iwate, Japan. This facility is fully certified in accordance with ISO14001, TS16949 and OHSAS18001.