Dual Photo Diode for the near infrared range

PREMA´s silicon photo diodes have separate cathodes and a common anode. They offer a very low dark current in the range of less than 100pA at reverse voltages of up to 20V. The capacitance of the photo diodes of less than 60pF at 10Volts allows the use for light signals of higher frequency.

The applied ModuS U6 process allows economic production of large sized photo diodes with a high yield and less impurity traps. Thus a very uniform sensitivity across both elements can be achieved, which is important for position detection. PR5001 has its peak sensitivity in the near infrared range around 890nm.

Possible applications for these dual photo diodes are light measurement, laser beam alignment in laser printers and DVD/CD players, the use in optical encoders and light barriers.

Samples of the PR5001 are now available.