Digi-Key Now Stocking SiC RF Power MESFETs from Cree
Electronic component distributor Digi-Key Corporation and Cree, Inc., a leader in wide bandgap transistors and radio frequency integrated circuits (RFICs), announced today that Cree’s silicon carbide (SiC) Metal-Semiconductor Field-Effect Transistors (MESFETs) are now in stock and ready for shipment.Digi
Cree’s 10-watt CRF24010 and 60-watt CRF24060 are un-internally matched SiC RF transistors, capable of supporting extremely wide operational bandwidths. SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater efficiency, greater power density, and wider bandwidths. SiC MESFETs are optimized for applications such as wideband military communications, secure homeland defense communications, Class A and A/B amplifiers, TDMA, EDGE, CDMA, W-CDMA broadband amplifiers, and WiMAX.
Also available from Digi-Key are the CRF24010-TB and CRF24060-TB Demonstration Test Fixtures. These products, featured in Digi-Key’s print and online catalogs, are available for purchase and same-day shipping directly from Digi-Key.
We are very pleased to offer these quality products to our customers, said Mark Larson, Digi-Key president and COO. The power density and efficiency advantages of Cree’s MESFETs will enable scores of engineers to enhance the performance of their new designs.
We are pleased that Digi-Key has added our SiC MESFET products to its growing line of electronic components, said Jim Milligan, Cree director of RF and Microwave products. Cree’s 48-volt products have proven to be extremely useful in applications requiring high power and efficiency over wide operational bandwidths – especially for those operating in high thermal environments. We’re confident the convenience of using Digi-Key’s distribution services will help accelerate the adoption of the technology.
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