Cree Demonstrates High Quality 150-mm Silicon Carbide Substrates

SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications. The significant size advancement of single crystal SiC substrates to 150-mm can enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry.

“Cree’s achievement of 150-mm SiC substrates further demonstrates Cree’s leadership in SiC materials technology,” said Dr. Vijay Balakrishna, Cree Materials product line manager. Steve Kelley, Cree chief operating officer, added, “We expect that 150-mm substrates can reduce device cost, boost manufacturing output and expand our product range”.