Adesto CBRAM Memory Technology Demonstrates Ultra Low-Power Operation
Adesto Technologies will demonstrate ultra-low power operation of its proprietary CBRAM memory in a paper to be presented at the 2013 Symposia on VLSI Technology and Circuits in Kyoto, Japan, June 11-14, 2013.The
CBRAM is an emerging, disruptive memory technology which can be integrated in standard CMOS processes, function as a discrete memory device or be embedded in microcontrollers, System-on-Chip (SOC) or Field Programmable Gate Arrays (FPGA).
The paper demonstrates the ability of a non-volatile CBRAM memory block to operate at less than 1V supply voltage for read, program and erase functions without the need for charge pumps. This low-power functionality translates to 3x lower write voltage and approximately 10x lower write energy compared to other low energy non-volatile memory devices.
We have built some exciting wearable wireless body sensors that run completely without batteries from body heat, but one key missing piece was non-volatile memory (NVM). Existing NVM devices are way too power hungry for our aggressive power budgets,” said Ben Calhoun, associate professor at the University of Virginia, “This integrated ultra low-power CBRAM from Adesto is an important advance for self-powered systems.