The AONX38168 offers the lowest on-state resistance and best Figure of Merits (Rdson x Qg), making it suitable for server and telecommunications applications and for new designs to operate at higher switching frequencies, says the company.
The device includes a low-side and high-side MOSFET in a leadless surface mount package. The package outline measures 5.0 x 6.0mm.
The AONX38168 uses 25V n-channel MOSFET technology and the XSPairFET includes the low-side and high-side MOSFET in a leadless surface mount package. A typical application is a synchronous DC/DC converter.
The MOSFET is designed with the latest bottom source packaging technology which has a lower switch node ringing due to lower parasitic inductance. It offers a higher power density comparative to existing solutions, claims the company, and is well suited for server and telecommunication markets.
The XSPairFET has bottom source connection for the low-side MOSFET which can result in improved thermal performance, simplified layout, and reduced EMI, claims the company.
The AONX38168 is immediately available in production quantities with a lead-time of 12 to 14 weeks.