This GaN discrete amplifier are 50Ω input-matched packaged in a small form factor 5x6mm SOIC-8 outline air cavity ceramic package that provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.
Features
• Advanced GaN HEMT and Heat Sink Technology
• Input Internally Matched to 50Ω
• 28V Operation, Output Power of 9W
• 30MHz to 512MHz Instantaneous Bandwidth
• Gain: 19dB
• Power Added Efficiency: 70%
• Large-Signal Models Available
• EAR99 export control Applications
• Milcom, Public Mobile Radio
• Electronic Warfare
• Power Amplifier Stage for Commercial Wireless Infrastructure
• Civilian and Military Radar
• General Purpose Tx Amplification
For more information on RFHA1003, visit
https://estore.rfmd.com/RFMD_Onlinestore/Products/RFMD+Parts/PID-P_RFHA1003.aspx