NXP Boosts Small Cell Wireless Base Stations With High-Performance RF
NXP Semiconductors today introduced a new portfolio of LDMOS power transistors designed for small cell wireless base stations. With dedicated solutions for both picocell and microcell architectures – which average 1 to 2 W, and 8 to 12 W, respectively – the RF power transistors span frequency ranges from 700 MHz to 2.7 GHz and include the world’s first asymmetric MMICs, as well as low-cost, low-power plastic devices.Deli
“Small cells are emerging as a cost-effective approach to increase wireless network capacity and quality of service, when used as a complement to macro base stations. By offering a broad portfolio of energy-efficient LDMOS power transistors dedicated to picocells, microcells and active antenna systems, we’re providing the flexibility needed to build highly versatile, scalable small-cell solutions,” said Christophe Cugge, director of marketing, base station power amplifiers, NXP Semiconductors.
NXP solutions for microcells include:
Asymmetric and symmetric MMICs for dual-stage microcells. NXP has introduced a new range of monolithic microwave integrated circuits, including the industry’s first asymmetric MMICs, which provide more power efficiency at back-off and offer increased flexibility, particularly in Doherty configurations in microcells and antenna arrays. The first MMIC based on NXP’s Gen7 LDMOS technology, the BLM7G22S-60PB(G), is fully released, with qualification samples of 7 new product types now available. All 7 MMICs are dual path with two separate amplifiers, each with 30-dB gain and a certain power rating of P1 dB. Ideal for dual-stage micro base stations where high integration is a priority, NXP’s family of symmetric and asymmetric MMICs offer a modular approach, allowing different power levels on each path, as well as better isolation between the two paths for better Doherty performance and stability.
LDMOS power transistors for single-stage, high-performance microcells. For the most performance-sensitive microcells, NXP has introduced a range of single-stage dual-path devices in different bands, including the BLF6G22LS-40P and the BLF6G27LS-40P, which are currently in volume production. Additional products, including the BLP7G10S-45P, the BLP7G22S-60P and the BLF8G27LS-50A are currently in development.
Solutions for picocells include:
Low-power LDMOS transistors. NXP now offers the plastic 10-W BLP7G22-10, providing 17 dB gain at 2.0 GHz, and the 7.5-W BLP7G27-07, providing 15.3 dB gain at 2.6 GHz, for final-stage picocell applications in a variety of configurations from Class A to Doherty. NXP’s low-power plastic LDMOS transistors offer high performance at 12 volts, with a peak power of 4 watts – for example, in a high-efficiency 1 watt picocell using two devices in a Doherty configuration. Further, as pre-drivers or drivers in both micro and macro base stations, they can serve as low-cost alternatives to the ceramic BLF6G21-10G and BLF6G27-10G, which are in mass production. NXP is also developing two MMICs for this power class.