Fabricated using Qorvo’s 0.25µm gallium nitride on silicon carbide (GaN-on-SiC) semiconductor process, this high-performance S-band amplifier has greater than 58dBm of saturated output power and is subject to only minimal power losses.
It is supplied in a compact 7.0mm × 7.0mm × 0.85mm package, with each of its two RF ports incorporating a DC blocking capacitor.
A minus 40 to 85 degree Celsius operational temperature range is supported.
The device is supported with an evaluation board.