Power amplifier offers 25dB gain
Qorvo’s 100-W QPA3069 power amplifier has joined the Mouser Electronics analogue portfolio. The device is predominantly focused on defence and avionics applications (such as radar). This high power density IC covers the 2.7GHz to 3.5GHz radio frequency (RF) band and offers a 25dB power gain along with a 53% power-added efficiency (PAE).
Fabricated using Qorvo's 0.25µm gallium nitride on silicon carbide (GaN-on-SiC) semiconductor process, this high-performance S-band amplifier has greater than 58dBm of saturated output power and is subject to only minimal power losses.
It is supplied in a compact 7.0mm × 7.0mm × 0.85mm package, with each of its two RF ports incorporating a DC blocking capacitor.
A minus 40 to 85 degree Celsius operational temperature range is supported.
The device is supported with an evaluation board.