The device is being showcased at European Microwave Week (October 10-12) in Nuremberg.
The MAGX-101214-500 enables customers to scale to higher power levels across a host of ASR applications, delivering 500W output power and greater than 70% power efficiency under pulsed conditions at 50V operation.
Supplied in a small-footprint ceramic flanged package and supporting matching structures that minimise circuit size, the transistors help to enable rugged, compact radar systems underpinned with efficient, simplified cooling and power supply architectures.
“The continued expansion of MACOM’s GaN-on-Si product portfolio enables customers to address an ever-widening range of RF power requirements while achieving performance profiles that meet and exceed GaN-on-SiC, at significantly less cost at scaled volume production levels,” said Greg French, Senior Product Manager, RF Power, at MACOM. “Our proven technology leadership in GaN-on-Si combined with our decades-long heritage in civil and defense radar are among the many factors fueling our innovation in these important markets, as evidenced by the new MAGX-101214-500.”