Companies

Vishay

  • One Greenwich Place Shelton, CT 06484 United States
    06484
    United States of America
  • 001-402-563-6866
  • http://www.vishay.com
  • 001-402-563-6296

Vishay has grown through acquisitions to include such top names as Dale, Sfernice, Draloric, Sprague, Vitramon, Siliconix, General Semiconductor, BCcomponents, and Beyschlag. Vishay's portfolio of brands represents an unmatched collection of discrete semiconductors and passive components. All of these brands and products are part of one global manufacturer: Vishay.

Vishay Articles

Displaying 861 - 880 of 991
Power
21st August 2009
N-Channel Power MOSFETs in SC-75 Package Offers 8V to 30V VDS Range

Vishay has expanded its family of n-channel TrenchFET power MOSFETs in the thermally enhanced PowerPAK SC-75 package to offer a VDS range from 8 V to 30 V. The devices released today include the industry’s first 30-V device in the 1.6-mm by 1.6-mm footprint area, and a 20-V MOSFET with the industry’s lowest on-resistance.

Passives
21st August 2009
Vishay - Precision Non-Magnetic Thin Film Resistors Offer TCR of ± 25 ppm/°C and Tolerances to ± 0.1 % in 12 Case Sizes

Vishay has introduced the new PNM series of precision non-magnetic thin film resistors. The devices feature a low standard TCR of ± 25 ppm/°C and laser-trimmed tolerances down to ± 0.1 % over a wide temperature range of - 55 °C to + 125 °C.

Power
18th August 2009
Monolithic Power MOSFET and Schottky Diode Achieves 3 Milliohms On-Resistance in SO-8

Vishay Intertechnology has released the first of its monolithic MOSFET and Schottky SkyFET products to use the company’s latest TrenchFET technology. Using TrenchFET Gen III silicon, the new Si4628DY delivers the lowest on-resistance ever for a device of its type in the SO-8 package, with a maximum rDS(on) of 3 milliohms at a 10-V gate drive and 3.8 milliohms at 4.5 V.

Displays
18th August 2009
Vishay - 128 x 32 LED Graphics Displays with Drive Electronics and + 5V HC CMOS Level Video Interface

Vishay Intertechnology has announced two new 128 x 32 LED graphics displays with drive electronics and a + 5V HC CMOS-level video interface. Designed as replacements for the popular APD-128G032 plasma display module, the new LED displays offer designers a choice of bright red (LEE-128G032B) or neon orange (LEE-128G032-1) colors while both offer high brightness and superior viewing characteristics in a slim package.

Passives
6th August 2009
Vishay’s New PLT Series of Precision Low-TCR Thin Film Resistors Offers TCR of ± 5 ppm/°C and Tolerances to ± 0.02 % in Three Case Sizes

Vishay Intertechnology, Inc. today introduced the new PLT series of precision low-TCR thin film resistors. The devices feature a low standard TCR of ± 5 ppm/°C and tolerances down to ± 0.02 % over a wide temperature range of - 55 °C to + 125 °C.

Power
4th August 2009
Vishay’s Low-Profile Rectifiers Feature ESD Protection to 25 kV and Voltage Range of 100 V to 600 V in MicroSMP Package with 0.65-mm Height

Vishay Intertechnology, Inc. today released a series of low-profile surface-mount rectifiers with ESD protection to 25 kV. The new MSE1Px devices are offered in an eSMP series MicroSMP package with footprint dimensions of just 2.5 mm by 1.3 mm with a height profile of 0.65 mm. In addition to their ESD capabilities, the new devices feature a rugged maximum junction temperature of 175 °C and an MSL moisture sensitivity level of 1.

Power
4th August 2009
500V Vishay Siliconix Power MOSFETs Feature 0.270 On-Resistance

Vishay has released three new 500-V MOSFETs that extend its Gen 6.2 n-channel planar FET technology to the TO-220, TO-220F, and TO-247 packages. The new SiHP18N50C (TO-220), SiHF18N50C (TO-220 FULLPAK), and SiHG20N50C combine their 500-V rating with low 0.270 Ω maximum on-resistance at a 10-V gate drive. This low RDS(on) translates into lower conduction losses that save energy in power factor correction (PFC) and pulsewidth modulation (PWM) ...

Analysis
4th August 2009
Vishay - Enhanced AEC-Q101-Qualified Surface-Mount Transmissive Optical Sensors

Vishay Intertechnology today announced that it has extended the temperature range of its AEC-Q101-qualified TCPT1300X01 and TCUT1300X01 surface-mount transmissive (interrupter) optical sensors for the automotive market. The sensors are the industry’s first such devices to feature a junction temperature rating of + 145 °C, an operating temperature range of - 40 °C to + 125 °C, and a Moisture Sensitivity Level rating of 1 (MSL1).

Pending
3rd August 2009
Vishay - Low-Profile Surface-Mount 1A Rectifiers Feature Voltage Range of 100 to 200V and 25ns Reverse Recovery Time

Vishay Intertechnology has announced a new series of low-profile, surface-mount 1A rectifiers with a 100 to 200V voltage range and ultrafast 25ns reverse recovery time for high-frequency applications.

Power
27th July 2009
12V Power MOSFET from Vishay claims Industry-Best Maximum On-Resistance

Vishay has expanded its family of Gen III TrenchFET power MOSFETs down to 12 V with the release of a new n-channel device offering the industry’s lowest on-resistance and on-resistance times gate charge for a device with this voltage rating. The 12-V SiR494DP features a maximum on-resistance of 1.2 mΩ at a 10-V gate drive and 1.7 mΩ at a 4.5-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-t...

Power
27th July 2009
Vishay - Low-Profile Rectifiers Feature ESD Protection to 25 kV in MicroSMP Package with 0.65-mm Height

Vishay has released a series of low-profile surface-mount rectifiers with ESD protection to 25 kV. The new MSE1Px devices are offered in an eSMP series MicroSMP package with footprint dimensions of just 2.5 mm by 1.3 mm with a height profile of 0.65 mm. In addition to their ESD capabilities, the new devices feature a rugged maximum junction temperature of 175 °C and an MSL moisture sensitivity level of 1.

Power
23rd July 2009
Vishay Releases Two New microBuck Integrated Synchronous Buck Regulators With Wide Voltage Range to 28 V, 93 % Efficiency, and High-Frequency Operation to 1 MHz

Vishay Intertechnology, Inc. today announced two new devices in the microBuck™ family of integrated synchronous buck regulators. The 4-A SiC413 and 10-A SiC417 are dc-to-dc converter solutions featuring an advanced controller IC with gate drivers, two PWM-optimized n-channel MOSFETs (high and low side), and a bootstrap diode in a standalone buck regulator configuration.

Passives
20th July 2009
Battery Shunt Resistor With 36W Power Capability and Resistance Values Down in 8518 Size Package

Vishay has announced a new Power Metal Strip battery shunt resistor that combines a 36-W power capability in the 8518 size package with extremely low resistance values down to 100 µΩ. The WSBS8518 battery shunt resistor features a proprietary processing technique that produces extremely low resistance values of 100 µΩ, 125 µΩ, and 250 µΩ. This provides increased accuracy in battery shunt applications for gas, diesel, hybri...

Power
20th July 2009
Vishay Siliconix 35-A DrMOS Solution Integrates MOSFETs and Driver ICs in Compact 6-mm Square Package for Voltage Regulators in CPU-Based Systems

Vishay Intertechnology has announced an integrated DrMOS solution providing high-side and low-side n-channel MOSFETs plus a full-featured MOSFET driver IC, all in a single PowerPAK MLF6x6 package. Available in two versions tailored for 3.3-V or 5-V controllers respectively, the new SiC769 is fully compliant with the DrMOS specification for voltage regulators (VRs) in servers and desktop computers, graphics boards, workstations, game consoles, and...

Passives
30th June 2009
Vishay - Low-Profile, High-Current Inductors in 2020 Case Size

Vishay has announced a IHLP low-profile, high-current inductor in the 2020 case size. The compact IHLP-2020CZ-01 offers a 5.18-mm by 5.49-mm footprint and ultra-low 3.0-mm profile, with a high maximum frequency and standard inductance values from 0.10 μH through 15 μH.

Power
25th June 2009
Vishay Siliconix 30-V P-Channel TrenchFET Gen III Power MOSFET Sets New Industry First with 2.6-mΩ Maximum On-Resistance in SO-8 Footprint Area

Vishay Intertechnology, Inc. today released the industry's first 30-V p-channel power MOSFET in the SO-8 footprint area to boast maximum on-resistance down to 2.6 mΩ at a 10-V gate drive and 3.75 mΩ at 4.5 V. With these specifications, the new Vishay Siliconix Si7145DP, latest member of the TrenchFET Gen III p-channel family, achieves the lowest on-resistance ever for this voltage rating and footprint.

Passives
23rd June 2009
Vishay - Bulk Metal Foil Ultra-High-Precision Trimming Potentiometers

Vishay has announced two new series of Bulk Metal Foil ultra-high-precision Accutrim trimming potentiometers. The 3/4-in rectilinear devices offer extremely low end-to-end TCR of ± 5 ppm/°C (1285G) and ± 15 ppm/°C (1280G) from – 55 °C to + 125 °C, + 25 °C ref., and ± 25 ppm/°C through the wiper, load life stability of 0.1 % typical under full rated power at + 25 °C for 2,000 hours, and a < 0.05 % typical settability.

Passives
22nd June 2009
Surface-Mount Resistor from Vishay in Compact 4527 Package

Vishay has announced that it is expanding its WSR series of Power Metal Strip resistors with the industry's first such device to offer a 5-W power rating in the 4527 package size.

Pending
22nd June 2009
Vishay Siliconix - High-Precision 8-Channel and Dual 4-Channel CMOS Analog Multiplexers

Vishay has announced the release of two new multiplexers that are optimized for ±15-V high-precision, low-noise signal switching in data acquisition, industry process control, test and measurement, and medical systems. The design of the 8-channel DG508B and dual 4-channel DG509B makes the devices ideal for high-precision multiplexing in the analog front end of A-to-D networks, where faster and more accurate data acquisition performance is requir...

Power
18th June 2009
Vishay Siliconix Releases Asymmetric Dual Power MOSFET in 6 by 3.7mm Package

Vishay has introduced the first device in a series of co-packaged, asymmetric power MOSFET pairs that reduces the space required for the high- and low-side power MOSFETs in dc-to-dc converters. The industry-first SiZ700DT in the new PowerPAIR package, which measures 6-mm by 3.7-mm, combines a low-side and high-side MOSFET in one compact device while still obtaining low on-resistance and high maximum current, saving space over using two discrete s...

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