Richardson RFPD has announced availability and full design support capabilities for four new 650V Silicon Carbide (SiC) Schottky diodes from Microsemi. The new devices are the latest addition to Microsemi's SiC Schottky product family.
The new devices feature zero recovery time (trr), low forward voltage and low leakage current, and are available in compact footprint packages. They are designed to improve performance in high-power industrial systems, including switched-mode power supply (SMPS), solar inverters, and power factor correction (PFC) applications.
Key features of the new 650V SiC Schottky diodes include devices with 10A, 20A and 30A current and a forward voltage of 1.5 @ 25degrees C, 2.0 @ 150 degrees C. The devices come in TO-220 and TO-247 packages.