TI’s new TPS728185315 LDO features a very low dropout of 230 mV with an input voltage range of 2.7 V to 6.5 V and fixed output voltages between 0.9 V and 3.6 V. The LDO also comes with EEPROM preset voltage options of 1.85 V and 3.15 V. The LDO enables the designer to set switchable voltages for eFUSE and SIM cards, such as a higher voltage for fuse programming or with detection of the SIM card, and a lower voltage at the end of programming. The designer can switch between two voltages in a finite amount of time without over and undershoots. Dynamic voltage scaling also helps reduce leakage currents in sub-micron multimillion transistor processors used extensively in portable applications, such as TI’s ultra-low power MSP430 microcontrollers.
An integrated precision bandgap and error amplifier provides an overall 2.5 percent accuracy over load, line and temperature extremes. The TPS728185315 provides a high power-supply rejection ratio (PSRR) over a wide frequency range of up to 1 MHz, fast 160 µs start-up time and excellent line and load transient response. The device is fully specified over a temperature range of -40º C to 125º C.