In addition to improving efficiency and power density, the NexFET Power Block can generate up to 40 A of current with a switching frequency of up to 1.5 MHz, which reduces solution size and cost. The optimized pinout and grounded lead frame significantly reduces development time and improves overall circuit performance. Furthermore, the NexFET Power Block can achieve comparable performance to other semiconductor technologies, such as GaN, but in a cost effective manner.
Key features and benefits of CSD86350Q5D Power Block:
· 5-mm x 6-mm SON outline is half the size of two discrete MOSFETs in 5-mm x 6-mm QFN packages.
· Greater than 90 percent power efficiency at 25 A operation — two percent better efficiency and 20 percent lower power loss than competitive devices.
· Double the frequency without increasing power loss versus competitive solutions.
· The SON package with an exposed grounded pad on the bottom simplifies layout.