SoM "harnesses disruptive potential of RISC-V"
Compact on-resistance MOSFET enhances battery pack operation
The rise of the Internet of Things

Compact on-resistance MOSFET enhances battery pack operation

Toshiba Electronics has further expanded its comprehensive portfolio of power saving N-channel MOSFETs with the introduction of the SSM6N951L. Leveraging the company’s advanced power semiconductor process expertise and IP, this 12V-rated common-drain device exhibits numerous operational performance parameters.

The SSM6N951L is specifically intended for inclusion in the battery protection circuitry incorporated into the Li-Ion battery packs. Its ultra-low on-resistance (4.6mΩ maximum at a VGS of 3.8V) and minimal gate-source leakage current (1μA maximum at a VGS of 8V) mean that this power discrete device presents much lower thermal characteristics than those of the competition.

This is of real value during the battery packs’ charge/discharge cycles, allowing higher density solutions to be developed that support quicker charge rates, as well as having much greater reliability and a longer operational lifespan too.

These new MOSFETs are shipped in low-profile TCSP6A-172101 format packages (with dimensions of 2.14×1.67×0.11mm). As a result, they are optimised for implementation in modern space-limited battery powered equipment.

Keep Up to Date with the Most Important News

By pressing the Subscribe button, you confirm that you have read and are agreeing to our Privacy Policy and Terms of Use
Previous Post

SoM "harnesses disruptive potential of RISC-V"

Next Post

The rise of the Internet of Things