In this two part presentation, he also discusses the advantages of GaN over Silicon super junction MOSFETs, the advantages of TI’s integrated power stage over discrete GaN devices, and will show some example applications that demonstrate the performance advantages of GaN. Relevant TI GaN parts for this session are the LMG3410 and 3411 families of 600 volt GaNPower Stages and the LMG5200 80 volt GaN half bridge power stage.
To watch the video, click here.