Customers implementing the new Prime Soft diode profit from a low on-state loss. This is enabled by the monolithic silicon design creating an active silicon area increased by more than 25% compared to multichip diodes.
This design improves the switching power up to 6 to 10MW at a maximum junction temperature of 140°C. Compared to a free-floating contact without solid metallurgical connection between silicon and molybdenum carrier, the thermal resistance of the bonded device is about 20% lower.
In addition to the reliability and thermal properties, Infineon Prime Soft diodes feature minimum switching losses. Its soft reverse-recovery behavior shows no improper oscillations under all relevant operating conditions.
Further to the electric parameters, the mechanical concept simplifies the stack construction with series stacking of press-pack IGBTs and freewheeling diodes. This reduces the time needed for stack design by about 50%.
The ultra-soft IGBT freewheeling diodes in press-pack housings are available with 4.5kV blocking voltage. The diodes come in three different silicon diameters: D1600U45X122, D2700U45X122, and D4600U45X172.
