The LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs offer ultra-low on-resistance (RDS(ON)) levels of just 120 and 160Ω respectively. These SiC MOSFETs are designed for use as power semiconductor switches in a wide range of various power conversion systems, outperforming their silicon MOSFET counterparts substantially in terms of blocking voltage, specific-on resistance, and junction capacitances.
They also offer a combination of high operating voltages and ultra-fast switching that traditional power transistor solutions such as silicon IGBTs with similar current ratings and packages can’t match. Typical applications for these new SiC MOSFETs include:
- Electric vehicles
- Industrial machinery
- Renewable energy (e.g., solar inverters)
- Medical equipment
- Switch-mode power supplies
- Uninterruptible power supplies (UPSs)
- Motor drives
- High voltage DC/DC converters
- Induction heating
“These new SiC MOSFETs provide power converter designers with a state-of-the-art alternative to traditional silicon-based transistors,” said Michael Ketterer, Product Marketing Manager for Power Semiconductors at Littelfuse.
“Their inherent material characteristics and ultra-fast switching capabilities offer a variety of design optimisation opportunities including increased power density, higher efficiency, and the potential for lower bill-of-material costs.”
The new 1,200V SiC MOSFETs offer these key benefits:
- A reduction in passive filter components at the system level supports increased power density, for a design that’s optimised for use in high frequency, high efficiency applications.
- Extremely low gate charge and output capacitance combined with ultra-low on-resistance allows for minimal power dissipation, higher efficiency and a reduction in the size and sophistication of the cooling techniques required.
