Modern SoCs are typically manufactured on advanced CMOS process nodes, which can make them more susceptible to transient voltages and electro-static discharges appearing at the input/output ports. Due to the higher than desired input channel capacitance, traditional TVS devices can degrade high-speed signals as they travel between connectors at the boundary of the adopting system and the input/output ports of SoCs.
The DESD3V3Z1BCSF-7 has been developed using Diodes’ in-house processes to achieve ultra-low input channel capacitance (0.175pF typical), low dynamic resistance, low trigger/holding/clamping voltages, and is assembled in a package with ultra-low capacitance. Meticulous design results in low insertion loss, meeting the signal integrity requirement of high-speed interface standards like USB 3.1/3.2 and Thunderbolt 3.
“As advanced interfaces like USB Type-C become widely adopted, protecting the ports of advanced SoCs with multi-gigahertz bandwidth will become more imperative. To ensure reliable operation of these SoCs and the USB Type-C ports, the need for an incredibly low profile TVS able to provide a high level of protection without impacting the integrity of the high-speed signals is now paramount,” commented Dr. Timothy Chen, Division Director, Diodes Incorporated.
In addition to its ultra-low input capacitance, the DESD3V3Z1BCSF-7 offers ESD protection that meets IEC61000-4-2 requirements of up to 8kV air and contact. The company claims that it leads the industry by offering the best combination of clamping voltage (VCL = 4.5V typical for IPP = 3A), breakdown voltage (VBR = 9V maximum), and reverse standoff voltage (VRWM = 3.3V maximum), while peak-pulse power dissipation (PPP) is 25W over the short-circuit waveform of 8/20µs.
The DESD3V3Z1BCSF-7 is supplied in the ultra-compact chip-scale X2-DSN0603-2 package, measuring 0.6×0.3mm and 0.3mm high.
