The devices are fully matched to 50 Ω across the band, include temperature-compensated output power detectors, and are fabricated using a GaAs pHEMT process featuring full passivation for enhanced reliability.
The MAAP-011247-DIE and MAAP-011248-DIE can be used as a power amplifier stage or as a driver stage in higher power applications.
They are suitable for test and measurement, EW, ECM, and radar applications.
