N-channel MOSFETs reduce heat dissipation by 40%

Two N-channel MOSFETs for load switches in mobile devices are claimed to deliver class-leading low on-resistance, according to Toshiba Electronics Europe.

The SSM6K513NU and SSM6K514NU help contribute to high system efficiency, low power consumption and are suited for use in the latest battery operated portable applications.

Use of the company’s U-MOS IX-H series trench process ensures that the MOSFETs achieve low on-resistances. RDS(ON) rating are 6.5mΩ for the 30V SSM6K513NU and 8.9mΩ for the 40V SSM6K514NU. This allows the new products to reduce heat dissipation resulting from turn-on loss by approximately 40% when compared with the company’s existing products.

These two MOSFETs are suitable for use in electric power switching applications over 10W, including small-size mobile devices that meet the USB Type-C and USB Power Delivery (PD) standards. Both devices are housed in compact SOT-1220 packages.

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