Compared to MOSFETs in leadless DFN packages, they increase reliability. Their reduced package inductance increases performance at higher operating frequencies.
The new MOSFETs offer very low on-resistances from 0.52Ω at 10V and ultra-low gate charge from 17nC, reducing conduction and switching losses to save energy.
Therefore, the new MOSFETs are ideal for lighting, industrial, telecom, computing, and consumer applications. They withstand high energy pulses in the avalanche and commutation modes and are fully RoHS compliant with Halogen free green mold compound.
