The company’s range of IG17, IG22 and IG26 InGaAs photodiodes are not only suitable for IR measurements, but their ability to detect from 400nm and excellent temperature stability means they also offer the choice of a replacement for Silicon photodiodes in laser applications, especially for measurements above 900nm where Silicon’s temperature dependence starts to deviate from the ideal under 0.1%/K value.
In this situation InGaAs is an attractive option providing a constant temperature coefficient of under 0.1%/K across a broad range of wavelengths. In Laser Components UK’s measurements, the IG22 series is recorded as having a coefficient of 0.002%/K, and the corresponding spectral behaviour can be found in the graph below.
