Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy during the design phase is essential. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs addressed this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times stressed the need for further refinement.
The new L3 models utilse a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared with the L1 models. This enables high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase.
As of April 2025, ROHM has released 37 L3 models for its 4th Generation SiC MOSFETs, available for download directly from the models & tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.
