SiC MOFSET chip from ROHM used in Toyota EVs

The power module equipped with ROHM’s 4th generation SiC MOSFET bare chip has been adopted in the traction inverter of Toyota’s new crossover BEV ‘bZ5’ for the Chinese market.

The bZ5 is a crossover-type BEV jointly developed by Toyota, BYD TOYOTA EV TECHNOLOGY (BTET), FAW Toyota, and was launched by FAW Toyota in June 2025.

The power module adopted this time has begun mass production shipments from HAIMOSIC, a joint venture between ROHM and Zhenghai Group. ROHM’s power solutions centered on SiC MOSFETs contribute to the extended range and enhanced performance of the new BEV.

ROHM aims to complete the construction of the production line for the next-generation 5th generation SiC MOSFET by 2025, and is also accelerating the market introduction plans for the 6th and 7th generations, centering on the development of SiC power devices. ROHM will continue to work on improving device performance and production efficiency, and strengthen the system to provide SiC in various forms such as bare chips, discrete components, and modules, promoting the spread of SiC and contributing to the creation of a sustainable mobility society.

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