World of Photonics Congress 2025
Radiation-hardened, QMLV 200-V half-bridge GaN gate driver by Texas Instruments
Enhanced Detections and Compute for ADAS systems with Next Gen Radar Sensors

Radiation-hardened, QMLV 200-V half-bridge GaN gate driver by Texas Instruments

The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating).

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